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Title: A Physically Transient Form of Silicon Electronics
Date: 9/2012
  Link to Journal Abstract
Abstract: A remarkable feature of modern silicon electronics is its ability to remain physically invariant, almost indefinitely for practical purposes. Although this characteristic is a hallmark of applications of integrated circuits that exist today, there might be opportunities for systems that offer the opposite behavior, such as implantable devices that function for medically useful time frames but then completely disappear via resorption by the body. We report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that has this type of transient behavior, together with integrated sensors, actuators, power supply systems, and wireless control strategies. An implantable transient device that acts as a programmable nonantibiotic bacteriocide provides a system-level example.
Non-technical Summary: In this paper, the authors report a set of materials, manufacturing schemes, device components, and theoretical design tools for a silicon-based complementary metal oxide semiconductor (CMOS) technology that offer implantable devices that function for medically useful time frames but then completely disappear via resorption by the body.
Content Emphasis Peer Reviewed Journal Article
Exposure Or Hazard Target Mammalian
Exposure Pathway Other/Unspecified
Method Of Study Material Analysis and Applications
Paper Type Applications
Particle Type Semiconductor
Production Method Engineered
Risk Exposure Group General Population
Target Audience Technical Research
Citation: Science, 2012, 337(6102): 1640-1644
Publication: Science
Author: Hwang SW, Tao H, Kim DH, Cheng H, Song JK, Rill E, Brenckle MA, Panilaitis B, Won SM, Kim YS, Song YM, Yu KJ, Ameen A, Li R, Su Y, Yang M, Kaplan DL, Zakin MR, Slepian MJ, Huang Y, Omenetto FG, Rogers JA
Volume: 337
Number: 6102
Pages: 1640-1644
     


Last updated on September 28, 2012
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This work is supported in part by the Nanoscale Science and Engineering Initiative of the National Science Foundation
under NSF Award Number EEC-0118007.

 		 
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